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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *High Reliability *Built-in Damper Diode APPLICATIONS *Designed for very high-definition color display horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w ww 1500 scs .i UNIT V 800 V 6 V 10 A 25 A 3 W .cn mi e ICP Collector Current-Peak Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 70 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4125 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 A ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain VECF C-E Diode Forward Voltage Switching Times w w w. sem isc VEB= 4V ; IC= 0 IC= 1A ; VCE= 5V IC= 8A ; VCE= 5V IF= 10A .cn i 40 8 4 1 mA 130 mA 6 2.0 V ts Storage Time IC= 6A, IB1= 1.2A; IB2= -2.4A 3.0 s tf Fall Time 0.1 0.2 s isc Websitewww.iscsemi.cn 2 |
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